Interconnect structure and process of making the same

Interconnect structure and process of making the same

A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top o...

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Bibliographische Detailangaben
Hauptverfasser: FITZSIMMONS JOHN ANTHONY, STANDAERT THEODORUS EDUARDUS, KO TZE-MAN, SANKARAN SUJATHA, LUSTIG NAFTALI ELIAHU, DAVIS PEGEEN M, NICHOLSON LEE MATTHEW, GRECO STEPHEN EDWARD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.