Integrated BST microwave tunable devices fabricated on SOI substrate

A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.

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Bibliographische Detailangaben
Hauptverfasser:	KIM IL-DOO, AVRAHAMI YTSHAK, TULLER HARRY L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE SEMICONDUCTOR DEVICES WAVEGUIDES
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Beschreibung
Zusammenfassung:	A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.