Mask design for enhancing line end resolution

A mask design for enhancing line end resolution is provided. In an embodiment, a mask for use in patterning an underlying layer comprises opaque regions and transparent regions arranged to define a line having an end, a slit extending laterally through the line a spaced distance from the end of the...

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Bibliographische Detailangaben
Hauptverfasser:	GABOR ALLEN H, CHEN ZHENG G
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS
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Beschreibung
Zusammenfassung:	A mask design for enhancing line end resolution is provided. In an embodiment, a mask for use in patterning an underlying layer comprises opaque regions and transparent regions arranged to define a line having an end, a slit extending laterally through the line a spaced distance from the end of the line, and a feature extending above or below the space adjacent to the end of the line.