Method for determining focus deviation amount in pattern exposure and pattern exposure method

A plurality of first measurement patterns each including a protruding pattern formed of a resist film and a recessed pattern having a space with a shape corresponding to the protruding pattern are formed on a first substrate such that they have different focus values at a time of exposure, edge incl...

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Bibliographische Detailangaben
Hauptverfasser:	FUKUMOTO HIROFUMI, IWAMOTO FUMIO, UJIMARU NAOHIKO, ASAHI KEN-ICHI
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A plurality of first measurement patterns each including a protruding pattern formed of a resist film and a recessed pattern having a space with a shape corresponding to the protruding pattern are formed on a first substrate such that they have different focus values at a time of exposure, edge inclination amounts of the plurality of first measurement patterns are measured, and a focus dependence (17) of the edge inclination amounts is obtained based on correspondences (7) and (14) between the edge inclination amounts and the focus values. A second measurement pattern including the protruding pattern and the recessed pattern is formed on a second substrate so as to measure edge inclination amounts of the second measurement pattern, and a focus deviation amount deviating from a best focus at the time of exposure of the second measurement pattern is calculated from the edge inclination amounts of the second measurement pattern based on the focus dependence of the edge inclination amounts. A dimension of the protruding pattern and a dimension of the space of the recessed pattern are set to be different so that best focus values at the time of exposing the protruding pattern and the recessed pattern become closer.