Programmable resistance memory element with threshold switching material

Programmable resistance memory element with threshold switching material

A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.

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Bibliographische Detailangaben
Hauptverfasser: KOSTYLEV SERGEY A, CZUBATYJ WOLODYMYR
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.