Pattern correction method, pattern correction system, mask manufacturing method, semiconductor device manufacturing method, recording medium, and designed pattern

According to an aspect of the invention, there is provided a pattern correction method in which a shape of a target pattern is corrected in accordance with an arrangement state between the target pattern configuring a designed pattern and a vicinity pattern disposed in the vicinity of the target pat...

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Bibliographische Detailangaben
1. Verfasser:	KOTANI TOSHIYA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	According to an aspect of the invention, there is provided a pattern correction method in which a shape of a target pattern is corrected in accordance with an arrangement state between the target pattern configuring a designed pattern and a vicinity pattern disposed in the vicinity of the target pattern, the pattern correction method comprises detecting a first arrangement state between a first predetermined portion of an edge of the target pattern and the vicinity pattern, detecting a second arrangement state between a second predetermined portion of the edge of the target pattern and the vicinity pattern, determining a correction value of the edge of the target pattern based on a rule in accordance with the first and second arrangement states, and adding the correction value to the edge of the target pattern.