Gate dielectric and method

Gate dielectric and method

CMOS gate dielectric made of high-k metal silicates by reaction of metal with silicon dioxide at the silicon surface. Optionally, a silicon dioxide monolayer may be preserved at the interface.

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Bibliographische Detailangaben
Hauptverfasser: MERCER DOUGLAS E, COLOMBO LUIGI, ROTONDARO ANTONIO L. P
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:CMOS gate dielectric made of high-k metal silicates by reaction of metal with silicon dioxide at the silicon surface. Optionally, a silicon dioxide monolayer may be preserved at the interface.