Image sensor integrated circuit devices including a photo absorption layer

Integrated circuit devices include a semiconductor substrate and a sensor array region including a plurality of photoelectric conversion elements arranged in an array on the semiconductor substrate. A plurality of interlayer dielectric layers are on the sensor array region and a plurality of light transmissive regions extend through the plurality of interlayer dielectric layers from respective ones of the plurality of photoelectric conversion elements. A plurality of light reflecting metal elements are between ones of the plurality of interlayer dielectric layers, positioned outside of and between ones of the light transmissive regions. A photo absorption layer is formed on an upper surface of ones of the plurality of metal elements that inhibits reflection of light associated with the photoelectric conversion element of one of the light transmissive regions to another of the light-transmissive regions to limit crosstalk between the plurality of photoelectric conversion elements.