Chemical mechanical polishing pad

A chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a high modulus component forming a continuous polymeric matrix and an impact modifier within the continuous polymeric matrix. The high modulus component...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	JAMES DAVID B, KULP MARY JO, ANTRIM ROBERT F
Format:	Patent
Sprache:	eng
Schlagworte:	DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	A chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a high modulus component forming a continuous polymeric matrix and an impact modifier within the continuous polymeric matrix. The high modulus component has a modulus of at least 100 MPa. The impact modifier includes a low modulus component having a modulus of at least one order of magnitude less than the high modulus component that increases the impact resistance of the polishing pad.