Metal-germanium physical vapor deposition for semiconductor device defect reduction
The present invention provides a method of manufacturing a metal silicide electrode ( 100 ) for a semiconductor device ( 110 ). The method comprises depositing by physical vapor deposition, germanium atoms ( 120 ) and transition metal atoms ( 130 ) to form a metal-germanium alloy layer ( 140 ) on a...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention provides a method of manufacturing a metal silicide electrode ( 100 ) for a semiconductor device ( 110 ). The method comprises depositing by physical vapor deposition, germanium atoms ( 120 ) and transition metal atoms ( 130 ) to form a metal-germanium alloy layer ( 140 ) on a semiconductor substrate ( 150 ). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit ( 400 ). |
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