Semiconductor laser device
A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films are located on the four corners of the front surface electrode. |
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