Device for the range-resolved determination of scattered light, operating method, illumination mask and image-field mask

An illumination mask ( 10 a) for a device for the range-resolved determination of scattered light, having one or more scattered-light measuring structures ( 11 a) which respectively include an inner dark-field zone which defines a minimum scattering range, to an associated image-field mask and a cor...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	GROMER OSWALD, MANGER MATTHIAS, ARNZ MICHAEL, STUEHLER JOACHIM, KLOSE GERD
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY COLORIMETRY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RADIATION PYROMETRY TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	An illumination mask ( 10 a) for a device for the range-resolved determination of scattered light, having one or more scattered-light measuring structures ( 11 a) which respectively include an inner dark-field zone which defines a minimum scattering range, to an associated image-field mask and a corresponding device is provided. Also provided is an associated operating method and a microlithography projection-exposure system having such a device. The scattered-lighter measuring structure in the illumination mask has a scattered-light marker zone ( 20 a) in the form of a bright-field zone, which on the one hand borders the inner dark-field zone and on the other hand borders an outer dark-field zone, which defines a maximum scattering range. The device may optionally be designed for the multi-channel measuring of scattered light by using a suitable image-field mask and also for multi-channel wavefront measurement, and the detection part may contain an immersion medium. Applications include, for example, the range-resolved determination of scattered light of projection objectives in microlithography projection-exposure systems.