Method for forming an isolating trench with a dielectric material

The present invention relates to a method of forming an isolating trench of a semiconductor device with a dielectric material, and to a method of forming an isolating trench in a memory device.

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Bibliographische Detailangaben
Hauptverfasser:	WELLHAUSEN UWE, REGUL JOERN, HEIDEMEYER HENRY
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a method of forming an isolating trench of a semiconductor device with a dielectric material, and to a method of forming an isolating trench in a memory device.