Method for fabricating memory cells for a memory device

The invention provides a method for fabricating a memory device having memory cells which are formed on a microstructured driving unit ( 100 ), in which method a shaping layer ( 104 ) is provided and is patterned in such a manner that vertical trench structures ( 105 ) are formed perpendicular to the surface of the driving unit ( 100 ). Deposition of a seed layer ( 106 ) on side walls ( 105 a) of the trench structures ( 105 ) allows a crystallization agent ( 107 ) which has filled the trench structures ( 105 ), during crystallization, to have grain boundaries perpendicular to electrode surfaces that are to be formed. This provides memory cells based on vertical ferroelectric capacitors in a chain FeRAM structure.