Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method

Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method

The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) sin...

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Hauptverfasser: IMADE MAMORU, KITAOKA YASUO, MINEMOTO HISASHI, KIDOGUCHI ISAO, YOSHIMURA MASASHI, MORI YUSUKE, KAI YASUNORI, SASAKI TAKATOMO, KAWAMURA FUMIO
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5x1.013x105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.