Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

A magnetoresistance effect element includes a first ferromagnetic layer ( 1 ), insulating layer ( 3 ) overlying the first ferromagnetic layer, and second ferromagnetic layer ( 2 ) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KAMIGUCHI YUZO, OKUNO SHIHO, OHSAWA YUICHI, HANEDA SHIGERU, KISHI TATSUYA
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
PERFORMING OPERATIONS
PHYSICS
STATIC STORES
TRANSPORTING
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Beschreibung
Zusammenfassung:A magnetoresistance effect element includes a first ferromagnetic layer ( 1 ), insulating layer ( 3 ) overlying the first ferromagnetic layer, and second ferromagnetic layer ( 2 ) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.