Semiconductor component with a MOS transistor

Semiconductor component with a MOS transistor

The source area ( 3 ) is highly doped, like the channel area, for the same conductance type. The drain area ( 4 ) is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection.

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Bibliographische Detailangaben
Hauptverfasser: SCHNABEL RAINER FLORIAN, SOMMER MICHAEL BERNHARD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The source area ( 3 ) is highly doped, like the channel area, for the same conductance type. The drain area ( 4 ) is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection.