System and method for inspecting a semiconductor sample

The present invention relates to a system and method of inspecting a semiconductor sample. A plurality of scans of the semiconductor sample are recorded. Each of the scans comprises a spatially resolved measurement of a property of interest. At least one cross-correlation is calculated between at least two of the plurality of scans. For each of the plurality of scans, a respective shift value is calculated based on the at least one cross-correlation. The scans are superimposed with each other. In the superposition, each of the scans is shifted by the respective shift value. The shift values can be adapted to compensate a drift of the semiconductor sample which occurs while the scans are recorded. Hence, the present invention helps overcome problems caused by the drift.