Phase shift mask blank, phase shift mask, and pattern transfer method

In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coeffici...

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Bibliographische Detailangaben
Hauptverfasser:	HARAGUCHI TAKASHI, INAZUKI YUKIO, II YOSHIHIRO, YOSHIKAWA HIROKI, OKAZAKI SATOSHI, FUKUSHIMA YUICHI, SAGA TADASHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coefficient k which increases as the wavelength changes from 157 nm to 260 nm, and has a thickness of up to 15 nm. The phase shift mask blank has minimized wavelength dependency of transmittance and can be processed with a single dry etching gas.