Method for CMP with variable down-force adjustment

The present invention relates to a method for performing chemical mechanical polishing. A high down-force step is performed. A low down-force step is performed. At least one of the down-force steps is modified, based on if one of the down-force steps exceeds an acceptable tolerance associated therew...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	SMITH STANLEY MONROE, LENG YAOJIAN, DOKE NILESH SHANTARAM
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates to a method for performing chemical mechanical polishing. A high down-force step is performed. A low down-force step is performed. At least one of the down-force steps is modified, based on if one of the down-force steps exceeds an acceptable tolerance associated therewith. Other systems and methods are also disclosed.