Non-volatile memory device and method of fabricating the same

A method of fabricating an a non-volatile memory includes forming trench isolation regions in an inactive region of a semiconductor substrate, adjacent trench isolation regions defining respective protrusions having rounded edges therebetween, wherein upper surfaces of the trench isolation regions a...

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1. Verfasser:	YOO TAE-KWANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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