Method for determining projected lifetime of semiconductor devices with analytical extension of stress voltage window by scaling of oxide thickness
A method for efficiently and accurately measuring a maximum Vcc calculation or failure rate and lifetime projection for microprocessors and other semiconductor products analytically scales low voltages applied to thinner oxides to thicker oxides. The expanded voltage window that is closer to the use...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for efficiently and accurately measuring a maximum Vcc calculation or failure rate and lifetime projection for microprocessors and other semiconductor products analytically scales low voltages applied to thinner oxides to thicker oxides. The expanded voltage window that is closer to the use voltage is obtained thereby to provide accurate voltage acceleration factors and max Vce extraction. |
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