Method for fabricating semiconductor device and wire with silicide
A method for fabricating a wire with silicide is disclosed. First, a conductive layer is formed on a substrate. And, a hard mask layer is formed on the conductive layer. Then, the hard mask layer is used as a mask to remove a portion of the conductive layer. Afterwards, a spacer is formed on the sid...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for fabricating a wire with silicide is disclosed. First, a conductive layer is formed on a substrate. And, a hard mask layer is formed on the conductive layer. Then, the hard mask layer is used as a mask to remove a portion of the conductive layer. Afterwards, a spacer is formed on the sidewalls of the conductive layer and the hard mask layer. Afterwards, the hard mask layer is removed. Next, a silicide is formed on the conductive layer. |
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