Method for improving reliability of copper interconnects

Method for improving reliability of copper interconnects

Doping copper interconnects ( 100 ) with silicon ( 115 ) has been shown to improve Electromigration and Via Stress Migration reliability. After copper ( 118 ) is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiH4 over the copper inte...

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Bibliographische Detailangaben
Hauptverfasser: ZUHOSKI STEVEN P, BARTH MICHAEL D, WEST JEFFREY A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Doping copper interconnects ( 100 ) with silicon ( 115 ) has been shown to improve Electromigration and Via Stress Migration reliability. After copper ( 118 ) is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiH4 over the copper interconnect ( 100 ) for 0.5 to 5 seconds at a temperature of 325-425° C.