Method for fabricating a nonvolatile memory cell
A method of fabricating a nonvolatile memory cell includes providing a substrate with a trench, with a sidewall where a tunnel oxide layer and a floating gate are successively formed, forming a control gate in the trench, performing a high density plasma deposition process to form an HDP oxide layer...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A method of fabricating a nonvolatile memory cell includes providing a substrate with a trench, with a sidewall where a tunnel oxide layer and a floating gate are successively formed, forming a control gate in the trench, performing a high density plasma deposition process to form an HDP oxide layer on the top surface of control gate. |
|---|