Apparatus and method for measuring the thickness of a thin film via the intensity of reflected light

A thin film thickness measurement apparatus that can measure immediately after film growth thickness of a thin film of a substrate that is grown includes a light receiving/projecting unit directing light substantially perpendicular to the substrate and receiving light reflected from the substrate, a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TANAKA JUNICHI, HATANAKA MASATSUGU, TAGUSA YASUNOBU, TANIGAWA TORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A thin film thickness measurement apparatus that can measure immediately after film growth thickness of a thin film of a substrate that is grown includes a light receiving/projecting unit directing light substantially perpendicular to the substrate and receiving light reflected from the substrate, and an analyze unit analyzing thickness of a thin film of the substrate according to intensity of reflected light received by the light receiving/projecting unit.