Manufacture of a semiconductor device

Manufacture of a semiconductor device

A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers ( 11,13,15,17 ) with each pair of barrier layers being separated by a quantum well layer ( 12,14,16 ), comprises annealing each barrier layer ( 11,13...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JOHNSON KATHERINE L, HEFFERNAN JONATHAN, HOOPER STEWART, BOUSQUET VALERIE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers ( 11,13,15,17 ) with each pair of barrier layers being separated by a quantum well layer ( 12,14,16 ), comprises annealing each barrier layer ( 11,13,15,17 ) separately. Each barrier layer ( 11,13,15,17 ) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.