Micro-fluid ejection assemblies

A micro-fluid ejection assembly including a silicon substrate having accurately formed fluid paths therein. The fluid paths are formed by a deep reactive ion etching process conducted on a substrate having a surface characteristic before etching selected from the group consisting of a dielectric lay...

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Bibliographische Detailangaben
Hauptverfasser:	MCNEES ANDREW LEE, KRAWCZYK JOHN WILLIAM, MRVOS JAMES MICHAEL, SULLIVAN CARL EDMOND
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CORRECTION OF TYPOGRAPHICAL ERRORS DIFFUSION TREATMENT OF METALLIC MATERIAL i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LINING MACHINES METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PRINTING SELECTIVE PRINTING MECHANISMS STAMPS TRANSPORTING TYPEWRITERS
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Beschreibung
Zusammenfassung:	A micro-fluid ejection assembly including a silicon substrate having accurately formed fluid paths therein. The fluid paths are formed by a deep reactive ion etching process conducted on a substrate having a surface characteristic before etching selected from the group consisting of a dielectric layer thickness of no more than about 5000 Angstroms, and a substantially dielectric material free pitted surface wherein a root mean square depth of surface pitting is less than about 500 Angstroms and a maximum surface pitting depth is no more than about 2500 Angstroms. Fluid paths in such substrates having improved flow characteristics for more reliable fluid ejection operations.