Method for fabricating a semiconductor structure

A method fabricates a semiconductor structure having a plurality of memory cells that are provided in a semiconductor substrate of a first conductivity type and contains a plurality of planar selection transistors and a corresponding plurality of storage capacitors connected thereto. The selection transistors have respective first and second active regions of a second conductivity type. The first active regions are connected to the storage capacitors and the second active regions are connected to respective bit lines, and respective gate stacks, which are provided above the semiconductor substrate in a manner insulated by a gate dielectric. In this case, a single-sided halo doping is effected, and an excessive outdiffusion of the halo doping zones is prevented by introduction of a diffusion-inhibiting species.