Method for forming uniaxially strained devices

A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor structure is provided which comprises a substrate ( 201 ) with a gate structure ( 209 ) disposed thereon, wherein the gate structure comprises a gate electrode ( 227 ) and at least one spacer structure ( 215, 217 ), and wherein the substrate comprises a first semiconductor material. A first trench ( 231 ) is created in the substrate adjacent to the gate structure through the use of a first etch. The gate electrode is then etched with a second etch. Preferably, the minimum cumulative reduction in thickness of the gate electrode from the first and second etches is dg, the maximum depth of the first and second trenches after the first and second etches is dt, and dg>=dt.