Magnetic random access memory and method of manufacturing the same

Magnetic random access memory and method of manufacturing the same

A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HONJO HIROAKI, SAITHO SHINSAKU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device includes a second ferromagnetic layer opposing to the wiring layer. A first perpendicular projection of the first ferromagnetic layer on the substrate and a second perpendicular projection of the second ferromagnetic layer on the substrate are different in area, and one of the first and second perpendicular projections contains the other.