Semiconductor device and process for manufacturing the same

The present invention provides a semiconductor device comprising: a semiconductor layer ( 3 ); a gate electrode ( 11 ) formed on the semiconductor layer ( 3 ) via a gate insulation film ( 10 ); and a first insulation film ( 13 ) formed at one or more of sidewalls of the semiconductor layer ( 3 ), th...

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Bibliographische Detailangaben
Hauptverfasser:	SORADA HARUYUKI, TAKAGI TAKESHI, INOUE AKIRA, ASAI AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	The present invention provides a semiconductor device comprising: a semiconductor layer ( 3 ); a gate electrode ( 11 ) formed on the semiconductor layer ( 3 ) via a gate insulation film ( 10 ); and a first insulation film ( 13 ) formed at one or more of sidewalls of the semiconductor layer ( 3 ), the gate insulation film ( 10 ) and the gate electrode ( 11 ); wherein the first insulation film ( 13 ) overlies a part of the gate insulation film ( 10 ) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.