Non-activated guard ring for semiconductor devices

A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may...

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Bibliographische Detailangaben
Hauptverfasser: MURPHY MICHAEL, SHELTON BRYAN S, POPHRISTIC MILAN, ZHU TING GANG, CERUZZI ALEX D, LIU LINLIN
Format: Patent
Sprache:eng
Schlagworte:
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Zusammenfassung:A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.