Method for forming plasma enhanced deposited, fully oxidized PSG film

Method for forming plasma enhanced deposited, fully oxidized PSG film

A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The ga...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LINN JACK H, PENTAS KATIE H, BORDELON MARK D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to produce a plasma enhanced deposited oxide film on a substrate having a Si-O-Si bond peak absorbance in the IR spectrum of at least 1092 cm-1.