Method for measuring silicide proportion, method for measuring annealing temperature, method for fabricating semiconductor device and x-ray photo receiver

Method for measuring silicide proportion, method for measuring annealing temperature, method for fabricating semiconductor device and x-ray photo receiver

A measurement substrate 100 in which a silicon oxide film 102 , a polysilicon layer 103 and a titanium silicide layer 104 are formed over a silicon substrate 101 in this order is prepared. The measurement substrate 100 is irradiated with X-rays so that the proportions of three types of silicides wit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TSUZUMITANI AKIHIKO, OKUNO YASUTOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:A measurement substrate 100 in which a silicon oxide film 102 , a polysilicon layer 103 and a titanium silicide layer 104 are formed over a silicon substrate 101 in this order is prepared. The measurement substrate 100 is irradiated with X-rays so that the proportions of three types of silicides with different compositions in the titanium silicide layer 104 are measured based on the intensity of hard X-rays emitted from oxygen in the silicon oxide film 102 and the intensity of hard X-rays emitted from titanium in the titanium silicide layer 104.