Versatile system for wafer edge remediation

The present invention provides a system ( 200, 300 ) for remediating aberrations along the perimeter of a semiconductor wafer ( 202 ). The system includes a cleaning apparatus ( 204 ) within which the wafer is spun within a confined area. A chuck ( 208 ) defines the confined area, having a sidewall that extends above the upper surface ( 214 ) of the wafer and surrounds the perimeter of the wafer. The chuck also has a bottom wall, with an aperture formed therein, beneath the wafer. The system includes an isolation barrier ( 220 ), disposed atop the bottom wall of the chuck and around the aperture, in proximity to the lower surface so of the wafer. This forms a narrow gap ( 226 ) between the barrier and the wafer. A pressurized source forcefully directs a gas ( 218 ) at and along the lower surface of the wafer. The system also includes a remediation solution ( 228 ) that is applied to the upper surface of the wafer. The solution is forced into a well ( 230 ) formed between the chuck sidewall and the perimeter of the wafer, such that the solution bathes the perimeter of the wafer.