Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process

An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a...

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Hauptverfasser: OHSHIMA YOSHIMASA, NISHIYAMA HIDETOSHI, MORIOKA HIROSHI, MATSUOKA KAZUHIKO, KEMBO YUKIO, NOGUCHI MINORI, SHIGYO YOSHIHARU
Format: Patent
Sprache:eng
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Zusammenfassung:An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a detection optical unit which detects light from the specimen illuminated by the laser with an image sensor while the table is moving, and a signal processor. The signal processor processes a signal outputted from the image sensor of the detection optical unit and converted to a digital signal and extracts defects of the specimen by comparing the converted digital signal with a reference digital signal. A display unit displays information of defects extracted by the signal processor.