Use of non-lithographic shrink techniques for fabrication/making of imprints masks

The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate improved critical dimension (CD) control and the reduction of line-edge roughness (LER) during pattern line formation in an imprint mask. One aspect of...

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Bibliographische Detailangaben
Hauptverfasser:	AMBLARD GILLES, PHAN KHOI A, SINGH BHANWAR
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate improved critical dimension (CD) control and the reduction of line-edge roughness (LER) during pattern line formation in an imprint mask. One aspect of the invention provides for forming features having CDs that are larger than ultimately desired in a mask resist. Upon application of a non-lithographic shrink technique, LER is mitigated and CD is reduced to within a desired target tolerance.