Diamond like carbon silicon on insulator substrates and methods of fabrication thereof

Diamond like carbon silicon on insulator substrates and methods of fabrication thereof

Diamond like carbon silicon on insulator substrates and methods of fabrication thereof are disclosed. In one form, a process for creating a composite structure for fabricating an electronic device is disclosed. The process includes forming a first diamond-like carbon layer on a substrate and couplin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: STALLINGS PATRICK L, BARNES WILLIAM C, RAMAN SANKAR N
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Diamond like carbon silicon on insulator substrates and methods of fabrication thereof are disclosed. In one form, a process for creating a composite structure for fabricating an electronic device is disclosed. The process includes forming a first diamond-like carbon layer on a substrate and coupling a support layer to the diamond-like carbon layer. The substrate is reduced to provide a device layer for fabricating a microelectronic device.