Semiconductor light emitting device and method of making the same

The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped InxGAyAl2N film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive o...

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Hauptverfasser:	HUANG PAO-I, TU CHUANNG, WU JENAU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	HUANG PAO-I TU CHUANNG WU JENAU
description	The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped InxGAyAl2N film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive oxide layer. Since the undoped film as a tunneling layer is very thin (
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Since the undoped film as a tunneling layer is very thin (<=20 angstroms), the electric field across the tunneling layer, under forward bias, will make electron tunneling from valence band to conduction band, and return to the transparent conductive layer, A reasonably low and stable forward voltage of the semiconductor light emitting device according to the invention can be achieved.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061128&DB=EPODOC&CC=US&NR=7141830B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061128&DB=EPODOC&CC=US&NR=7141830B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG PAO-I</creatorcontrib><creatorcontrib>TU CHUANNG</creatorcontrib><creatorcontrib>WU JENAU</creatorcontrib><title>Semiconductor light emitting device and method of making the same</title><description>The invention provides a semiconductor light emitting device and the method of making it. 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The semiconductor light emitting device, according to the invention, includes an undoped InxGAyAl2N film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive oxide layer. Since the undoped film as a tunneling layer is very thin (<=20 angstroms), the electric field across the tunneling layer, under forward bias, will make electron tunneling from valence band to conduction band, and return to the transparent conductive layer, A reasonably low and stable forward voltage of the semiconductor light emitting device according to the invention can be achieved.</abstract><oa>free_for_read</oa></addata></record>
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title	Semiconductor light emitting device and method of making the same
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