Semiconductor light emitting device and method of making the same
The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped InxGAyAl2N film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive o...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped InxGAyAl2N film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive oxide layer. Since the undoped film as a tunneling layer is very thin ( |
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