Method of making a memory cell

Method of making a memory cell

Methods of making memory devices/cells are disclosed. First and second electrode layers and a controllably conductive media therebetween are formed over a dielectric layer that has a planar surface and at least one opening. The layers on the dielectric layer planar surface are removed so that the re...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: AVANZINO STEVEN C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods of making memory devices/cells are disclosed. First and second electrode layers and a controllably conductive media therebetween are formed over a dielectric layer that has a planar surface and at least one opening. The layers on the dielectric layer planar surface are removed so that the remaining second electrode surface in the opening is co-planar with the dielectric layer planar surface. Methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed.