Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material
A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1-xGex, where 0.5
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1-xGex, where 0.5 |
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