System and method for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition

A system and method is disclosed for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition. A via in a semiconductor device is formed by placing a metal layer on a substrate and placing a layer of anti-reflective coating (ARC) titanium nitride (TiN) o...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	DRIZLIKH SERGEI, FRANCIS THOMAS JOHN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BEER BIOCHEMISTRY CHEMISTRY COMPOSITIONS OR TEST PAPERS THEREFOR CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL ORENZYMOLOGICAL PROCESSES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ENZYMOLOGY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEICACIDS OR MICROORGANISMS METALLURGY MICROBIOLOGY MUTATION OR GENETIC ENGINEERING ORGANIC CHEMISTRY PEPTIDES PHYSICS PROCESSES OF PREPARING SUCH COMPOSITIONS SEMICONDUCTOR DEVICES SPIRITS TESTING VINEGAR WINE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A system and method is disclosed for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition. A via in a semiconductor device is formed by placing a metal layer on a substrate and placing a layer of anti-reflective coating (ARC) titanium nitride (TiN) over the metal layer. A layer of dielectric material is placed over the ARC TiN layer and a via passage is etched through the dielectric and partially through the ARC TiN layer. A titanium layer is then deposited and subjected to a nitrogen plasma process. The nitrogen plasma converts the titanium layer to a first layer of titanium nitride. The first layer of titanium nitride does not react with fluorine to form a high resistance compound. Therefore the electrical resistance of the first layer of titanium nitride does not significantly increase during subsequent thermal cycles.