Semiconductor device including bit line formed using damascene technique and method of fabricating the same

A semiconductor device including a bit line formed using a damascene technique and a method of fabricating the same. The method includes forming an insulating layer on a substrate, forming a groove by etching the insulating layer to a partial depth, and forming spacers on the inner walls of the groo...

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Bibliographische Detailangaben

Hauptverfasser:	CHI KYEONG-KOO, KIM SANG-YONG, SON SEUNG-YOUNG, JEON JEONG-SIC, CHUNG SEUNG-PIL, KANG CHANG-JIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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