Semiconductor device including bit line formed using damascene technique and method of fabricating the same

Semiconductor device including bit line formed using damascene technique and method of fabricating the same

A semiconductor device including a bit line formed using a damascene technique and a method of fabricating the same. The method includes forming an insulating layer on a substrate, forming a groove by etching the insulating layer to a partial depth, and forming spacers on the inner walls of the groo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHI KYEONG-KOO, KIM SANG-YONG, SON SEUNG-YOUNG, JEON JEONG-SIC, CHUNG SEUNG-PIL, KANG CHANG-JIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device including a bit line formed using a damascene technique and a method of fabricating the same. The method includes forming an insulating layer on a substrate, forming a groove by etching the insulating layer to a partial depth, and forming spacers on the inner walls of the groove. An opening is formed by etching the insulating layer disposed under the groove using the spacers as an etch mask. A conductive layer is formed to fill the opening. A capping layer is formed to fill the groove.