Line level air gaps

Line level air gaps

In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts th...

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Bibliographische Detailangaben
Hauptverfasser: CHIRAS STEFANIE RUTH, COLBURN MATTHEW EARL, NITTA SATYANARAYANA VENKATA, HUANG ELBERT EMIN, YU ROY RONGQING, KUMAR KAUSHIK ARUN, LANE MICHAEL WAYNE, DALTON TIMOTHY JOSEPH, TYBERG CHRISTY SENSENICH, HEDRICK JEFFREY CURTIS, CHEN SHYNG-TSONG, NARAYAN CHANDRASEKHAR, ROSENBURG ROBERT, MALONE KELLY, PURUSHOTHAMAN SAMPATH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.