Solid-state imaging device and method for manufacturing the same

A solid-state imaging device according to the present invention includes a semiconductor substrate; a photoelectric conversion portion formed on the semiconductor substrate; a gate insulating film formed on the semiconductor substrate and covering the photoelectric conversion portion; a vertical transfer portion for transferring a charge generated at the photoelectric conversion portion in a vertical direction; and a multilayer transfer gate electrode for transferring the charge of the vertical transfer portion. At least one layer of the multilayer transfer gate electrode is made of at least two impurity doped amorphous silicon films of different impurity concentration. Thus, the solid-state imaging device and a method of manufacturing the same that tend to develop no local potential barrier in the transfer channel, enhance the yield, improve the withstand voltage of the insulating film that is sandwiched between electrodes, and prevent the leakage of light and the step interruption of the metal conductors due to local thinning of the light-blocking film are provided.