Plasma enhanced nitride layer

Plasma enhanced nitride layer

An etch stop layer located over a plasma enhanced nitride (PEN) layer. Interlayer dielectric material is then formed over the etched stop layer. The etch stop layer is used as an etch stop for etching openings in the interlayer dielectric. In some embodiments, integrated circuits built with the PEN...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FILIPIAK STANLEY M, CHEN JIAN, JEON YONGJOO, STEPHENS TAB A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An etch stop layer located over a plasma enhanced nitride (PEN) layer. Interlayer dielectric material is then formed over the etched stop layer. The etch stop layer is used as an etch stop for etching openings in the interlayer dielectric. In some embodiments, integrated circuits built with the PEN layer may include transistors with improved drive current at a given leakage current. Also, integrated circuits with the PEN layer may exhibit reduced parasitic capacitance.