Structures including perovskite dielectric layers and variable oxygen concentration gradient layers

Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxy...

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Bibliographische Detailangaben
Hauptverfasser:	MARIA JON-PAUL, KINGON ANGUS IAN
Format:	Patent
Sprache:	eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM LIME, MAGNESIA METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL REFRACTORIES SEMICONDUCTOR DEVICES SLAG SPRAYING OR ATOMISING IN GENERAL TRANSPORTING TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.